Paper presented at 2019 ICECS in Genova, Italy

The Neuromorphic Behaving Systems Group is proud to annouce that the paper "Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors" has been presented as a lecture in the special session "Memristor Modeling and Simulation Session" at the 2019 26th IEEE International Conference on Electronics Circuits and Systems in Genova, Italy.

The paper presents recent results on implementing an integrate-and-fire neuron using CMOS compatible ferroelectric field effect transistors (FeFETs). These devices show the ability to integrate incoming signals and change their polarization and thus their threshold voltage. By evaluting the threshold votlage of the FeFETs a spike activity can be detected. In the paper we suggest two different implementations offering various levels of biasing.